2002. 9. 3 1/1 semiconductor technical data KTC9016S epitaxial planar npn transistor revision no : 0 high frequency low noise amplifier application. hf, vhf band amplifier application. features small reverse transfer capacitance : c re =0.65pf(typ.). low noise figure :nf=2.2db(typ.) at f=100mhz. maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 ) note) h fe classification f:54 80, g:72 108, h:97 146, i:130 198 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =40v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =5v, i c =1ma 54 - 198 reverse transfer capacitance c re v ce =6v, f=1mhz, i e =0 - - 1.0 pf transition frequency f t v ce =6v, i c =1ma, f=200mhz 260 - - mhz collector-base time constant c c rbb' v ce =6v, i e =-1ma, f=30mhz - - 30 ps noise figure nf v ce =6v, i e =-1ma, f=100mhz - 2.2 4.0 db power gain g pe 15 - - db characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 4 v collector current i c 20 ma emitter current i e -20 ma collector power dissipation p c * 350 mw junction temperature t j 150 storage temperature range t stg -55 150 * p c : package mounted on 99.5% alumina (10 8 0.6 ) h rank type name marking lot no. bf fe
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